In 2025, the global semiconductor industry will usher in a new round of technological revolution. Silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga ₂ O3), as representatives of third-generation and fourth generation semiconductor materials, are redefining the competitive landscape in fields such as new energy vehicles, 5G communications, and photovoltaic energy storage due to their unique physical properties. Who will become the dominant player in these markets in the future? This article will deeply analyze the key to the victory or defeat of this "three strong competition" from three aspects: technical characteristics, application scenarios, and market potential.
一、Technical Characteristics: The Ultimate Game between Performance and Cost
1. Silicon carbide (SiC): the "king" of high voltage and high power
Silicon carbide has characteristics such as wide bandgap (3.2 eV), high breakdown field strength (3 MV/cm), and high thermal conductivity (4.9 W/cm · K), making it an ideal choice for high-voltage and high-power applications. Compared with silicon-based devices, its device efficiency has increased by 20% to 30%, and it is widely used in the fields of main drive inverters, photovoltaic inverters, and industrial power supplies for new energy vehicles.
Breakthrough progress:
Tianyue Advanced and Shuoke Crystal have successively launched 12 inch silicon carbide substrates, and the chip production of a single wafer is twice that of an 8-inch wafer.
Although the global silicon carbide substrate market is still dominated by international giants such as Wolfspeed and II-VI, the market share of Chinese companies has increased from 15% in 2022 to 30% in 2024, driving the process of localization.
2. Gallium Nitride (GaN): A High Frequency and Efficient "New Star"
The bandgap width of gallium nitride is 3.4 eV, with high electron mobility and low on resistance, making it particularly suitable for high-frequency scenarios. Gallium nitride devices can increase efficiency to over 95% and reduce device volume by 50% in 5G base stations, fast charging equipment, and data center power supplies.Market explosion point:
Gallium nitride fast charging technology has matured, and Chinese companies such as Innolux have achieved mass production of 8-inch silicon-based gallium nitride wafers. It is predicted that the global gallium nitride market size will reach 1.76 billion yuan in 2023, and is expected to exceed 50 billion yuan by 2028, with a compound growth rate of up to 98.5%.In the application field of in car OBC/DC-DC converters, with the continuous maturity of gallium nitride technology, many new energy vehicle manufacturers around the world (such as Tesla, BYD, etc.) have begun to adopt GaN technology in their in car charging systems and voltage converters. Leading semiconductor companies such as Infineon, Texas Instruments (TI), and STMicroelectronics (ST) have all launched GaN solutions for automotive power supplies and are gradually expanding their industry applications.
3. Gallium oxide (Ga ₂ O3): a low-cost and high potential "dark horse"
The bandgap width of gallium oxide reaches 4.8-4.9 eV, with a breakdown field strength of 8 MV/cm, and its Bari GaO value (BFOM) is 10 times that of silicon carbide. In addition, gallium oxide can be mass-produced at low cost through the melt method, theoretically at only one-third the cost of silicon carbide.Industrialization challenges:
NCT in Japan has achieved mass production of 4-inch gallium oxide wafers and announced in 2024 the successful cultivation of the first 6-inch Ga2O3 single crystal using advanced vertical bridge (VB) technology.
Chinese companies such as GaRen Semiconductor, FuJia Gallium Industry, GaHe Semiconductor, and MingGa Semiconductor are also actively expanding into the field of gallium oxide. In February 2025, Gallium Nitride Semiconductor announced the mass production of 4-inch conductive doped gallium oxide single crystals through the VB method. The VB method gallium oxide crystal growth equipment and process package are now fully open for sale. Recently, based on the first round of device verification, Fujia Gallium has optimized the MBE epitaxial process, significantly improving the performance of epitaxial wafers. Based on the development of MOSFET lateral power devices using epitaxial wafers, the current density has increased by 78.3% and the specific on resistance has been reduced by about 50%, giving it a significant international competitive advantage. In January 2025, Gallium and Semiconductor released new products such as 6-inch gallium oxide substrates. In the same month, Mingga Semiconductor successfully prepared a 4-inch (010) gallium oxide crystal blank using a new process, with a growth thickness of 55 millimeters. The usable size after processing was 3 inches and the thickness was 40 millimeters, laying the foundation for further expanding the size of the side cut crystal.
二、Application scenario: Differentiated competition driven by market demand
1. New energy vehicles: the main battlefield of silicon carbide
Silicon carbide devices can improve the charging efficiency of electric vehicles to "charge SOC from 30% to 80% in 7 minutes", while increasing the range by 15%. In 2024, the global silicon carbide market is expected to reach $1.76 billion, and is projected to exceed $10 billion by 2030.
Car company layout:
BYD, Ideal Auto, and others use silicon carbide main drive inverters, while Tesla Model 3/Y comes standard with silicon carbide modules across the entire lineup.
2. 5G Communication and Data Centers: The Rise of Gallium Nitride
Gallium nitride RF devices support the terahertz frequency band and can reduce power consumption by 40%. A domestic enterprise has already adopted this technology in its 6G base station prototype. In 2023, the global gallium nitride RF market is expected to reach $522 million and is projected to reach $894 million by 2029.
3. Photovoltaics and Industrial Power: The Potential Track of Gallium Oxide
Gallium oxide devices exhibit significant advantages in medium and low voltage applications below 650V, and can replace silicon-based IGBTs, thereby reducing system costs by 30%. According to FLOSFIA's prediction, by 2025, the size of the gallium oxide power device market will surpass that of the gallium nitride market, and reach $1.542 billion (approximately RMB 10 billion) by 2030, equivalent to 40% of the silicon carbide market and 1.56 times that of the gallium nitride market. According to Fuji Economy's forecast, the market size of gallium oxide power components will reach 154.2 billion yen (approximately 9.276 billion yuan) by 2030, surpassing the market size of gallium nitride power components.
三、Market Pattern: Global Competition and Domestic Breakthrough
1. Silicon carbide: Capacity expansion and technological upgrading
From the perspective of the industry landscape, major manufacturers such as Wolfspeed, Anson, Infineon, etc. are accelerating their expansion plans for 8-inch SiC wafers. Wolfspeed plans to establish a new factory in the United States, while Infineon's wafer fab in Malaysia is expected to achieve large-scale production by 2025. At the same time, domestic manufacturers Tianke Heda and Shandong Tianyue are rapidly expanding their production capacity.
2. Gallium Nitride: Industry Chain Integration and Cost Reduction
The gallium nitride industry chain is transitioning from 6 inches to 8 inches, and Chinese companies such as Innolux have achieved large-scale production. In 2023, the global gallium nitride market is expected to reach 1.76 billion yuan, and is projected to exceed 50 billion yuan by 2028.
3. Gallium oxide: technological breakthrough and market introduction
Gallium oxide is still in the stage of technology introduction, but its low-cost advantage has shown great potential in the fields of consumer electronics and industrial power supply. Japan's NCT has achieved mass production of 4-inch gallium oxide wafers, while Chinese companies such as GaInBev and Fujia Gallium are also accelerating their layout.
四、Future outlook: Diversified survival, each leading the way
1. Silicon carbide: the "gatekeeper" of the high-pressure market
The dominant position of silicon carbide in the fields of new energy vehicles and industrial power sources is still difficult to replace in the short term. With the launch of 12 inch substrates, costs are expected to further decrease, and the global market size is expected to reach $15 billion by 2030.
2. Gallium Nitride: The 'Leader' in the High Frequency Track
Gallium nitride has significant advantages in the fields of 5G communication and consumer electronics, and will be expanded to automotive grade applications in the future. Due to its high level of technological maturity and industrial chain integration, it is expected that the market size will exceed 50 billion yuan by 2028.
3. Gallium oxide: a disruptor in the medium and low voltage market
Gallium oxide has shown great potential in the field of medium and low voltage applications due to its low cost and high performance. If large-scale substrate technology can be overcome, it is expected that by 2030, its market size will reach 10 billion yuan, becoming a strong competitor to silicon carbide and gallium nitride.
五、Conclusion: The Triangular Game of Technology, Ecology, and Policy
Silicon carbide, gallium nitride, and gallium oxide each have unique performance advantages and application fields, and the future market will present a situation of diverse coexistence. Chinese enterprises are transforming from "pursuers" to "rule makers" through technological innovation and ecosystem integration.
